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EE 7410 - Power Electronics ICredit Hour(s): 3 Silicon and silicon carbide power devices; Fast-recovery, ultra-fast-recovery, and p-n junctions and Schottky power diodes; performance parameters; Power MOSFETs and IGBTs; static and dynamice characteristics; voltage and current stress; Pulse-width modulated (PWM) DC-DC power converts: topologies of power stages of power converters, such buck-boost, flyback, forward, half bridger, full-bridge, and push-pull power stages. Department Managed Prerequisite(s): Graduate level EE 5310 Minimum Grade of D Enrollment Restrictions: Must be enrolled in one of the following Levels: Graduate, Medical, Professional. Must be enrolled in one of the following Colleges: College of Egr & Computer Sci. Level: Graduate Schedule Type(s): Lecture
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