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Unprecedented growth of wireless communication and smart phones drive cheaper, smaller, and lower-power devices to be integrated on a single microelectronic chip. This requires combining low noise RF components with digital signal processing components on the same chip substrate. Complementary metal–oxide–semiconductor (CMOS) nano-technology has emerged as the state-of-the-art process to implement the above tasks.
Wright State offers you the opportunity to learn real world RF integrated circuit design from top level RF transceiver architectures to sub-component design culminating with you earning a certificate to reflect completion of a three-course sequence. Completing the certificate will provide you with the capabilities of designing CMOS amplifiers for different applications—CMOS up-and-down mixers, CMOS analog comparators, CMOS analog to digital converters, CMOS digital to analog converters, CMOS voltage control oscillators, CMOS phase locked loop frequency generators, and CMOS power amplifiers.
The courses include circuit design lab exercises using state-of-the-art computer-aided design tools widely used by industry and government.
View the Radio Frequency Mixed Signal Integrated Circuit Design (RF) Graduate Certificate program requirements in the Academic Catalog.
Students must meet the modified M.S.-EE admissions requirements as follows: